? ma rc h 200 4 - r e v i s i o n 1 . 5 ( w o r k i n g d o cu m en t ) 1 / 10 this is preliminary information on a new product foreseen to be developed. details are subject to change without notice. undervoltage overtemperature v cc gnd input output overvoltage current limiter logic driver power clamp v cc clamp v ds limiter detection detection detection k i out current sense VN920PEP single channel high side solid state relay n cmos compatible input n proportional load current sense n shorted load protection n undervoltage and overvoltage shutdown n overvoltage clamp n thermal shutdown n current limitation n protection against loss of ground and loss v cc n very low stand-by power dissipation n reverse battery protection (*) description the VN920PEP is a monolithic device designed in stmicroelectronics vipower m0-3 technology, intended for driving any kind of load with one side connected to ground. active v cc pin voltage clamp protects the device against low energy spikes (see iso7637 transient compatibility table). active current limitation combined with thermal shutdown and automatic restart protect the device against overload. the device integrates an analog current sense output which delivers a current proportional to the load current. device automatically turns off in case of ground pin disconnection. type r ds(on) i out v cc VN920PEP 15m w 30 a 36 v powersso-24 order codes package tube t&r powersso-24 VN920PEP VN920PEP13tr block diagram (*) see application schematic at page 8 target specification
2/10 VN920PEP absolute maximum rating connection diagram (top view) current and voltage conventions symbol parameter value unit v cc dc supply voltage 41 v - v cc reverse dc supply voltage - 0.3 v - i gnd dc reverse ground pin current - 200 ma i out dc output current internally limited a - i out reverse dc output current - 40 a i in dc input current +/- 10 ma v csense current sense maximum voltage -3 +15 v v v esd electrostatic discharge (human body model: r=1.5k w ; c=100pf) - input - current sense - output - v cc 4000 2000 5000 5000 v v v v p tot power dissipation t c 25c 96 w t j junction operating temperature internally limited c t c case operating temperature - 40 to 150 c t stg storage temperature - 55 to 150 c i s i gnd v cc v cc v sense output i out current sense i sense input i in v in v out gnd 1 2 3 4 5 6 output output output output input nc gnd v cc 24 23 22 21 20 19 nc nc output output tab = v cc 7 8 9 10 11 12 output output output output nc v cc nc current sense 18 17 16 15 14 13 nc nc output output
3/10 VN920PEP thermal data (*) when mounted on a standard single-sided fr-4 board with 1cm 2 of cu (at least 35 m m thick). electrical characteristics (8v 4/10 VN920PEP 2 electrical characteristics (continued) current sense (9v v cc 16v) (see fig. 1) protections vcc - output diode note 2: current sense signal delay after positive input slope note: sense pin doesnt have to be left floating. symbol parameter test conditions min typ max unit k 1 i out /i sense i out =1a; v sense =0.5v; t j = -40c...150c 3300 4400 6000 dk 1 /k 1 current sense ratio drift i out =1a; v sense =0.5v; t j = -40c...+150c -10 +10 % k 2 i out /i sense i out =10a; v sense =4v; t j =-40c t j =25c...150c 4200 4400 4900 4900 6000 5750 dk 2 /k 2 current sense ratio drift i out =10a; v sense =4v; t j =-40c...+150c -8 +8 % k 3 i out /i sense i out =30a; v sense =4v; t j =-40c t j =25c...150c 4200 4400 4900 4900 5500 5250 dk 3 /k 3 current sense ratio drift i out =30a; v sense =4v; t j =-40c...+150c -6 +6 % i senseo analog sense leakage current v cc =6...16v; i out =0a;v sense =0v; t j =-40c...+150c 010 m a v sense max analog sense output voltage v cc =5.5v; i out =5a; r sense =10k w v cc >8v; i out =10a; r sense =10k w 2 4 v v v senseh sense voltage in overtemperature conditions v cc =13v; r sense =3.9k w 5.5 v r vsenseh analog sense output impedance in overtemperature condition v cc =13v; tj>t tsd ; output open 400 w t dsense current sense delay response to 90% i sense (see note 2) 500 m s symbol parameter test conditions min typ max unit t tsd shut-down temperature 150 175 200 c t r reset temperature 135 c t hyst thermal hysteresis 7 15 c i lim dc short circuit current v cc =13v 5v 5/10 VN920PEP 02468101214161820222426283032 3000 3500 4000 4500 5000 5500 6000 6500 min.tj=-40c max.tj=-40c min.tj=25...150c max.tj=25...150c typical value figure 1: i out /i sense versus i out i out (a) i out /i sense figure 2: switching characteristics (resistive load r l =1.3 w ) v out dv out /dt (on) t r 80% 10% t f dv out /dt (off) i sense t t 90% t d(off) input t 90% t d(on) t dsense
6/10 VN920PEP truth table electrical transient requirements conditions input output sense normal operation l h l h 0 nominal overtemperature l h l l 0 v senseh undervoltage l h l l 0 0 overvoltage l h l l 0 0 short circuit to gnd l h h l l l 0 (t j t tsd ) v senseh short circuit to v cc l h h h 0 < nominal negative output voltage clamp l l 0 iso t/r 7637/1 test pulse test levels i ii iii iv delays and impedance 1 -25 v -50 v -75 v -100 v 2 ms 10 w 2 +25 v +50 v +75 v +100 v 0.2 ms 10 w 3a -25 v -50 v -100 v -150 v 0.1 m s 50 w 3b +25 v +50 v +75 v +100 v 0.1 m s 50 w 4 -4 v -5 v -6 v -7 v 100 ms, 0.01 w 5 +26.5 v +46.5 v +66.5 v +86.5 v 400 ms, 2 w iso t/r 7637/1 test pulse test levels results i ii iii iv 1cccc 2cccc 3acccc 3bcccc 4cccc 5c e e e class contents c all functions of the device are performed as designed after exposure to disturbance. e one or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
7/10 VN920PEP sense input normal operation undervoltage v cc v usd v usdhyst input overvoltage v cc sense input sense figure 3: waveforms load current load current load current overtemperature input sense t tsd t r t j load current v ov v ovhyst v cc > v usd short to ground input load current sense load voltage input load voltage sense load current 8/10 VN920PEP gnd protection network against reverse battery solution 1: resistor in the ground line (r gnd only). this can be used with any type of load. the following is an indication on how to dimension the r gnd resistor. 1) r gnd 600mv / (i s(on)max ). 2) r gnd 3 (- v cc ) / (-i gnd ) where -i gnd is the dc reverse ground pin current and can be found in the absolute maximum rating section of the devices datasheet. power dissipation in r gnd (when v cc <0: during reverse battery situations) is: p d = (-v cc ) 2 /r gnd this resistor can be shared amongst several different hsd. please note that the value of this resistor should be calculated with formula (1) where i s(on)max becomes the sum of the maximum on-state currents of the different devices. please note that if the microprocessor ground is not common with the device ground then the r gnd will produce a shift (i s(on)max * r gnd ) in the input thresholds and the status output values. this shift will vary depending on how many devices are on in the case of several high side drivers sharing the same r gnd . if the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the st suggests to utilize solution 2 (see below). solution 2: a diode (d gnd ) in the ground line. a resistor (r gnd =1k w) should be inserted in parallel to d gnd if the device will be driving an inductive load. this small signal diode can be safely shared amongst several different hsd. also in this case, the presence of the ground network will produce a shift ( j 600mv) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. this shift will not vary if more than one hsd shares the same diode/resistor network. series resistor in input line is also required to prevent that, during battery voltage transient, the current exceeds the absolute maximum rating. safest configuration for unused input pin is to leave it unconnected, while unused sense pin has to be connected to ground pin. load dump protection d ld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds v cc max dc rating. the same applies if the device will be subject to transients on the v cc line that are greater than the ones shown in the iso t/r 7637/1 table. m c i/os protection: if a ground protection network is used and negative transients are present on the v cc line, the control pins will be pulled negative. st suggests to insert a resistor (r prot ) in line to prevent the m c i/os pins to latch-up. the value of these resistors is a compromise between the leakage current of m c and the current required by the hsd i/os (input levels compatibility) with the latch-up limit of m c i/os. -v ccpeak /i latchup r prot (v oh m c -v ih -v gnd ) / i ihmax calculation example: for v ccpeak = - 100v and i latchup 3 20ma; v oh m c 3 4.5v 5k w r prot 65k w . recommended r prot value is 10k w. 1 application schematic 1 1 v cc gnd output d gnd r gnd d ld m c +5v r prot v gnd input current sense r sense r prot
9/10 VN920PEP pr e li mi nary powersso-24 ? mechanical data dim. mm. min. typ max. a 1.9 2.22 a2 1.9 2.15 a1 0 0.07 b 0.34 0.4 0.46 c 0.23 0.32 d 10.2 10.4 e7.4 7.6 e0.8 e3 8.8 g 0.1 g1 0.06 h 10.1 10.5 h 0.4 l 0.55 0.85 n 10o x3.9 4.3 y6.1 6.5
10/10 VN920PEP information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this p ublication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - printed in italy- all rights reserved. stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states http://www.st.com
|
